Light emitting apparatus

ABSTRACT

A light emitting apparatus having light emitting devices having a stack of a light-transmitting anode, a functional layer including at least a light emitting layer, and a cathode for a plurality of pixels corresponding to red, green, and blue colors on a substrate, wherein an optical resonator having a lower-layer-side reflecting layer at a lower-layer side of the anode is formed in the light emitting device, wherein a plurality of the pixels include pixels which correspond to different thicknesses of a anode, and wherein a light-transmitting insulating protective film is formed between the anode and the lower-layer-side reflecting layer to cover the lower-layer-side reflecting layer.

BACKGROUND

1. Technical Field

The present invention relates to a light emitting apparatus and anelectronic apparatus having a light emitting device such as an organicEL device.

2. Related Art

Much attention has been paid to display apparatus used for electronicapparatuses such as a mobile phone, a personal computer, and a PDA(Personal Digital Assistant) or light emitting apparatuses such as anorganic EL (Electroluminescence) apparatus used as an exposing head inan image forming apparatus such as a digital copier and a printer.Conventionally, when such kinds of light emitting apparatuses areconstructed as a color type, light of each color emits from each pixelby varying materials constituting a light emitting layer for each pixel.

On the other hand, there has been proposed a technique for extractinglight of each color from an emitting light of the light emitting deviceby disposing an optical resonator between a lower-layer-side reflectinglayer formed on a lower-layer side of the light emitting layer and anupper-layer-side reflecting layer formed on an upper layer side of thelight emitting layer and varying optical lengths of the opticalresonator for each pixel by changing thicknesses of positive electrodes(see Japanese Patent No. 2,797,883).

In a case where a bottom emission type organic EL apparatus which emitslight to a substrate side as seen from the light emitting layer isconstructed by using a technique disclosed in Japanese Patent No.2,797,883, the lower-layer-side reflecting layer is constructed with asemi-transparent reflecting film. In addition, in a case where a topemission type organic EL apparatus which emits light to an opposite sideof the substrate as seen from the light emitting layer is constructed,the lower-layer-side reflecting layer is constructed with a metal filmhaving a high reflectance such as aluminum and silver.

In addition, in order to construct the positive electrode with an ITOfilm, the ITO film is prepared, and a resist mask is formed on the ITOfilm by using a photolithography technique, and etching is performed.Therefore, in order to form different thicknesses of the positiveelectrodes for the red, green, and blue pixels, the aforementionedprocess is needed to repeat thee times. As a result, there is a problemin that, since the lower-layer-side reflecting layer is also etched byan etching solution or gas used to etch the ITO film, deterioration inreflecting characteristics of the lower-layer-side reflecting layer or aloss of the lower-layer-side reflecting layer occurs. The occurrence ofthe etching of the lower-layer-side reflecting layer is not limited toan etching end period when the lower-layer-side reflecting layer isexposed from the ITO, but the etching of the lower-layer-side reflectinglayer may occur just before the etching starts.

SUMMARY

An advantage of the invention is that it provides a light emittingapparatus where a lower-layer-side reflecting layer used for an opticalresonator and disposed at a lower-layer side of each of positiveelectrodes does not deteriorate even in case of forming differentthicknesses of the positive electrodes according to pixels and anelectronic apparatus having the light emitting apparatus.

According to an aspect of the present invention, there is provided alight emitting apparatus having light emitting devices having a stack ofa light-transmitting anode, a functional layer including at least alight emitting layer, and a cathode for a plurality of pixelscorresponding to red, green, and blue colors on a substrate, wherein anoptical resonator having a lower-layer-side reflecting layer at alower-layer side of the anode is formed in the light emitting device,wherein a plurality of the pixels include pixels which correspond todifferent thicknesses of a anode, and wherein a light-transmittinginsulating protective film is formed between the anode and thelower-layer-side reflecting layer to cover the lower-layer-sidereflecting layer.

In addition, since a plurality of the pixels include pixels whichcorrespond to different thicknesses of the anode, although the etchingprocesses are performed several times when the anode is formed,according to the invention, the light-transmitting insulating protectivefilm covering the lower-layer-side reflecting layer is disposed betweenthe anode and the lower-layer-side reflecting layer, after thelower-layer-side reflecting layer is formed, although any times of theetching processes are performed to form the anode, the etching cannotcause deterioration of the lower-layer-side reflecting layer.

In the aforementioned aspect, the lower-layer-side reflecting layer mayhave a total reflecting property, and light generated by the lightemitting layer may emit to an opposite side of the substrate as seenfrom the light emitting layer. In this case, although a high reflectanceis required for the lower-layer-side reflecting layer, according to theinvention, the etching related to the formation of the anode does notcause deterioration of the lower-layer-side reflecting layer, so thatthe lower-layer-side reflecting layer having a high reflectance can beconstructed.

In addition, in case of increasing reflectance of the lower-layer-sidereflecting layer, the lower-layer-side reflecting layer may be made ofany one of aluminum, an aluminum alloy, silver, and a silver alloy.Although the metal layer can easily deteriorate due to an etchingsolution or an etching gas, according to the embodiment, the etchingrelated to the formation of the lower-layer-side reflecting layer cannotdeteriorate the reflecting layer.

In addition, each of the thicknesses of the positive layer may bedefined so as to correspond an optical length of the optical resonatorfor each pixel to one of red, green, and blue lights, thereby defining acolor corresponding to each pixel. In the light emitting apparatushaving the aforementioned construction, although a plurality f thepixels correspond to red, green, and blue colors, the materials for theorganic functional layers constituting the light emitting device arecommon to the pixels irrespective of corresponding colors, and thecorresponding color is determined by thicknesses of the anode. Namely,in the invention, the optical resonator is provided to each of thepixels, and the optical length of the optical resonator is defined as alength corresponding to one of the red, green, and blue lights accordingto the thickness of the anode. Accordingly, since the lifetimes of thelight emitting devices are the same irrespective of which colors thepixels correspond to, the lifetime of the light emitting apparatus canbe prolonged. In addition, when the light emitting apparatus ismanufactured, the same material is used for the pixels, it is possibleto improve productivity.

In this case, a refraction index of the insulating protective film maybe lower than that of the anode. If the insulating protective film isformed between the lower-layer-side reflecting layer and the anode, theoptical length (thickness×refraction index) of the insulating protectivefilm is included in the optical length of the optical resonator. Here,since the optical length required for the optical resonator isdetermined for each color corresponding to each pixel, if the refractionindex of the insulating protective film is high, the anode must bethinned, so that an accuracy of the thickness of the positive protectivelayer is lowered. However, in the invention, since the insulatingprotective film has a low refraction index, the anode can be thickened,and if the anode is thick, there is an advantage in that the accuracy ofthe thickness can be heightened.

In this case, the insulating protective film may be constructed with anyone of a silicon nitride film, a silicon oxide film, and a resin. Sinethe insulating film has a low refraction index, the insulating film ispreferred.

In addition, wherein red, green, and blue color filters may be disposedat light-emitting sides of the red, green, and blue pixels,respectively. By doing so, a calorimetric purity of light emitting fromeach pixel can be further heightened.

In addition, the light emitting device may be an electroluminescencedevice.

A light emitting apparatus to which the invention is applied may be usedas a display apparatus for various electronic apparatus such as a mobilephone, a personal computer, and PDA. In addition, the light emittingapparatus to which the invention is applied may used as an exposing headfor an image forming apparatus (electronic apparatus) such as a digitalcopier and a printer.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention will be described with reference to the accompanyingdrawings, wherein like numbers reference like elements.

FIG. 1 is a schematic cross sectional view showing an organic EL device(light emitting device) used for an organic EL apparatus (light emittingapparatus) according to a first embodiment.

FIG. 2 is a schematic cross sectional view showing an organic EL device(light emitting device) used for an organic EL apparatus (light emittingapparatus) according to a second embodiment.

FIG. 3 is a view for explaining an example for forming differentthicknesses of anode in an organic EL apparatus employing the presentinvention.

FIG. 4 is a block diagram showing an electrical construction of anactive matrix type organic EL apparatus.

DESCRIPTION OF EXEMPLARY EMBODIMENTS

Now, embodiments of the present invention will be described withreference to the accompanying drawings. In addition, in the figures usedfor the following description, scales of layers or elements aredifferent from each other in order to show the layers or elements in aperceivable size on the figures.

First Embodiment

Basic Construction of Light Emitting Apparatus

FIG. 1 is a schematic cross sectional view showing an organic EL device(light emitting device) used for an organic EL apparatus (light emittingapparatus) according to a first embodiment of the invention.

In FIG. 1, the organic EL apparatus 1 according to the embodiment is atop emission type apparatus which emits display light to an oppositeside of a substrate 11, and an organic EL device 10 is formed for eachof red (R), green (G), and blue (B) pixels 100 (R), (G), and (B). Theorganic EL device 10 has a construction formed by sequentially stackinga transparent anode 12 made of ITO or the like, a hole transport layer13, and a cathode 16 made of a magnesium-silver alloy and having asemi-transparent reflecting property on an upper-layer side of thesubstrate 11 made of a glass or the like.

In addition, a reflecting layer 19 (a total reflecting layer) made ofaluminum, an aluminum alloy, silver, or a silver alloy is formed betweenthe substrate 11 and the anode 12, and an optical resonator 40 is formedbetween a lower-layer-side reflecting layer constructed with thereflecting layer 19 and an upper-layer-side reflecting layer constructedwith the cathode 16.

Here, the hole transport layer 13 or the light emitting layer 14 usedfor the organic EL device 10 is made of the same material for any one ofthe pixels 100 (R), (G), and (B), and the organic EL device 10 emitswhite light.

However, in the embodiment, thicknesses of the anode 12 for the pixels100 (R), (G), and (B) are different from each other, and the thicknessesof the anode 12 have the following relation.

Pixel 100 (B)<Pixel 100 (G)<Pixel 100 (R)

For example, the thicknesses of the anode 12 are defined as thefollowing values for the pixels 100 (R), (G), and (B).

Thickness of Anode 12 for Pixel 100 (B)=20 nm

Thickness of Anode 12 for Pixel 100 (G)=50 nm

Thickness of Anode 12 for Pixel 100 (R)=90 nm

The optical lengths of the optical resonator 40 for the pixels 100 (R),(G), and (B) are different from each other according to the pixels 100(R), (G), and (B). In other words, the thicknesses of the anode 12 areadjusted to correspond an optical length of the optical resonator toeach of the pixels 100 (R), (G), and (B), so that a predetermined colorlight can emit from each of the pixels (R), (G), and (B).

In the organic EL device 10 having the aforementioned construction, if acurrent flows from the anode 12 through the hole transport layer 13 andthe light emitting layer 14 to the cathode 16, the light emitting layer14 emits light according to an amount of the current. In addition, thelight emitting from the light emitting layer 14 passes through thecathode 16 and emits toward an observer's side, and the light emittingfrom the light emitting layer 14 toward the substrate 11 is reflected ona lower layer of the anode 12, passes through the cathode 16, and emitstoward the observer's side. At this time, the light are reflectedmultiple times between the lower-layer-side reflecting layer (reflectinglayer 19) and upper-layer-side reflecting layer (cathode 16) of theoptical resonator 40, so that it is possible to improve chromaticity oflight corresponding to an optical length of the optical resonator 40which is a integer times of ¼ wavelength. Therefore, although the whitelight is generated from an inner portion of the organic EL device 10,the red, green, and blue light emits from the pixels 100 (R), (G), and(B) corresponding to the red (R), green (G), and blue (B) colors,respectively.

Construction of Insulating Protective Film

In addition, in the embodiment, an light-transmitting insulatingprotective film 18 is formed between the reflecting layer 19 and theanode 12 to cover a surface and side surface of the reflecting layer 19.In the embodiment, the insulating protective film 18 is constructed witha silicon nitride film having a thickness of about 30 nm and arefraction index of 1.8.

Manufacturing Method

In order to manufacture the organic EL apparatus 1 having theaforementioned construction, a metal film (aluminum, an aluminum alloy,silver, or a silver alloy) having a light reflecting property is firstformed on a surface of the substrate 11 by using a sputtering method, avacuum depositing method, or the like, and after that, pattering isperformed by using a photolithography technique, so that the reflectinglayer 19 is formed.

Next, the insulating protective film 18 constructed with a siliconnitride film is formed on a surface of the reflecting layer 19 by usinga CVD method or the like.

Next, after an ITO film having a predetermined thickness is formed on asurface of the insulating protective film 18 by using a sputteringmethod, a resist mask is formed on an upper layer of the ITO film byusing a photolithography technique, and etching is performed. However,in the embodiment, since the thicknesses of the protective layer 12 forthe pixels 100 (R), (G), and (B) are different from each other, theaforementioned process repeats three times.

Next, the hole transport layer 13 and the light emitting layer 14 aresequentially formed by using an liquid droplet ejecting method, that is,the so-called inkjet method. The liquid droplet ejecting method is amethod of ejecting liquid droplets of a liquid material corresponding toa material constituting the hole transport layer 13 or the lightemitting layer 14, and performing drying, thereby fixing the material asthe hole transport layer 13 or the light emitting layer 14. At thattime, preferably, partition walls (not shown) called “bank” are formedaround the pixels 100 (R), (G), and (B) to prevent the ejected liquiddroplets or liquid material from leaking out.

In the aforementioned method, the hole transport layer 13 may be formedby using, for example, 3,4-polyethylene dioxythiophene/polystyrenesulphonic acid (PEDOT/PSS), that is, a polyolefin derivative as a holeinjection material, ejecting a dispersion solution on a predeterminedregion, and after that, performing drying. In addition, a material forforming the hole transport layer 13 is not limited to the aforementionedones, and polyphenylene vinylene of which polymer precursor ispolytetrahydrothiophenyl phenylene, 1,1-bis-(4-N,N-ditrilamino phenyl)cyclo hexane, or the like may be used.

In addition, preferably, as a material for forming the light emittinglayer 14, a high molecular material having a molecular weight of, forexample, 1,000 or more may be used. More specifically, a polyfluorenederivative, a polyphenylene derivative, polyvinyl carbosol, apolythiophene derivative, or a material formed by doping aperylene-based colorant, a coumarin-based colorant, or a rhodamine-basedcolorant such as rubrene, perylene, 9,10-diphenyl anthracene,tetraphenyl butadiene, nile red, coumarin 6, and quinacridone to thesehigh molecular materials may be used. In addition, as the high molecularmaterials, a Π-conjugated polymer material where double-bond Π electronsare non-polarized on a polymer chain is suitably used, because theΠ-conjugated polymer material is a conductive high molecular materialand has an excellent light-emitting performance. In particular, acompound having a fluorene backbone within the molecule, that is, apolyfluorene-based compound may be more suitably used. In addition tothe aforementioned materials, a composite for an organic EL devicedisclosed in JP-A-11-40358, that is, a composite for an organic ELdevice constructed by including a precursor of a conjugated polymerorganic compound and at least one type fluorescent colorant for changinglight-emitting characteristics may be used as a material for forming thelight-emitting layer.

After the hole transport layer 13 and the light emitting layer 14 areformed, an electron transport layer 15 and a cathode 16 are sequentiallyformed.

Effect of the Embodiment

As described above, in the embodiment, although a plurality of thepixels 100 correspond to red (R), green (G), and blue (B), the materialsfor the organic functional layers such as the hole transport layer 13and the light emitting layer 14 constituting the organic EL device 10are common to the pixels irrespective of corresponding colors, and thecorresponding color is determined by thicknesses of the anode 12.Namely, in the embodiment, the optical resonator 40 is provided to eachof the pixels 10, and the optical length of the optical resonator 40 isdefined as a length corresponding to one of the red, green, and bluelights according to the thickness of the anode 12. Accordingly, sincethe lifetimes of the organic EL devices 10 are the same irrespective ofwhich colors the pixels 100 correspond to, the lifetime of the organicEL apparatus 1 can be prolonged. In addition, when the organic ELapparatus 1 is manufactured, the same material is used for the pixels100, it is possible to improve productivity.

In addition, since a plurality of the pixels 100 include pixels whichcorrespond to different thicknesses of the anode 12, although theetching processes are performed several times when the anode 12 isformed, according to the embodiment, the light-transmitting insulatingprotective film 18 covering the reflecting layer 12 is disposed betweenthe anode 12 and the reflecting layer 19, after the reflecting layer 19is formed, although any times of the etching processes are performed toform the anode 12, the etching cannot cause deterioration of thereflecting layer 19. In particular, in the embodiment, the lightgenerated by the light emitting layer 12 emit to an opposite side of thesubstrate 11 as seen from the light emitting layer 12. In this case,although a high reflectance is required for the reflecting layer 19,according to the embodiment, the etching related to the formation of theanode 12 does not cause deterioration of the reflecting layer 12, sothat the reflecting layer 12 having a high reflectance can beconstructed. Here, in order to increase the reflectance of thereflecting layer 12, the reflecting layer 12 may be made of aluminum, analuminum alloy, silver, or a silver alloy. Although the metal layer caneasily deteriorate due to an etching solution or an etching gas,according to the embodiment, the etching related to the formation of thereflecting layer 12 cannot deteriorate the reflecting layer 12, so thatthe reflecting layer 12 can be made of aluminum, an aluminum alloy,silver, or a silver alloy.

In addition, in the embodiment, since the insulating protective film 18is interposed between the reflecting layer 19 and the anode 12, theoptical length (thickness x refraction index) of the insulatingprotective film 18 is included in the optical length of the opticalresonator 40. In this case, if the refraction index of the insulatingprotective film 18 is high, since the optical length required for theoptical resonator 40 is determined for each color corresponding to eachpixel, if the refraction index of the insulating protective film 19 ishigh, the anode 12 must be thinned, so that an accuracy of the thicknessof the positive protective layer 12 is lowered. However, in theembodiment, since the insulating protective film 19 is constructed witha silicon film and has a low refraction index of 1.8, the anode 12 canbe thickened, and if the anode 12 is thick, there is an advantage inthat the accuracy of the thickness can be heightened.

Here, preferably, the refraction index of the insulating protective film19 is lower the refraction index (=1.95) of the anode 12, and as thematerial, there is a silicon oxide film, an acryl resin, or the like aswell as a silicon nitride film.

Second Embodiment

FIG. 2 is a schematic cross sectional view showing an organic EL device(light emitting device) used for an organic EL apparatus (light emittingapparatus) according to a second embodiment of the invention.

Similarly to the first embodiment, the organic EL apparatus 1 shown inFIG. 2 is a top emission type apparatus which emits display light to anopposite side of a substrate 11, and an organic EL device 10 is formedfor each of red (R), green (G), and blue (B) pixels 100 (R), (G), and(B). The organic EL device 10 has a construction formed by sequentiallystacking a transparent anode 12 made of ITO or the like, a holetransport layer 13, and a cathode 16 made of a magnesium-silver alloyand having a semi-transparent reflecting property on an upper-layer sideof the substrate 11 made of a glass or the like. In addition, areflecting layer 19 (a total reflecting layer) made of aluminum, analuminum alloy, silver, or a silver alloy is formed between thesubstrate 11 and the anode 12, and an optical resonator 40 is formedbetween a lower-layer-side reflecting layer constructed with thereflecting layer 19 and an upper-layer-side reflecting layer constructedwith the cathode 16. In addition, the hole transport layer 13 or thelight emitting layer 14 used for the organic EL device 10 is made of thesame material for any one of the pixels 100 (R), (G), and (B), and theorganic EL device 10 emits white light.

However, in the embodiment, thicknesses of the anode 12 for the pixels100 (R), (G), and (B) are different from each other, and the thicknessesof the anode 12 have the following relation.

Pixel 100 (B)<Pixel 100 (G)<Pixel 100 (R)

For example, the thicknesses of the anode 12 are defined as thefollowing values for the pixels 100 (R), (G), and (B).

Thickness of Anode 12 for Pixel 100 (B)=40 nm

Thickness of Anode 12 for Pixel 100 (G)=70 nm

Thickness of Anode 12 for Pixel 100 (R)=110 nm

Namely, the thicknesses of the anode 12 are adjusted to correspond anoptical length of the optical resonator to each of the pixels 100 (R),(G), and (B), so that a predetermined color light can emit from each ofthe pixels (R), (G), and (B).

In addition, in the embodiment, an light-transmitting insulatingprotective film 18 is formed between the reflecting layer 19 and theanode 12 to cover a surface and side surface of the reflecting layer 19.In the embodiment, the insulating protective film 18 is constructed witha silicon nitride film having a thickness of about 30 nm and arefraction index of 1.5.

A method of manufacturing the organic EL apparatus 1 having theaforementioned construction is the same as that of the first embodiment,and thus, description thereto is omitted. However, in the embodiment,since the light-transmitting insulating protective film 18 covering thereflecting layer 19 is disposed between the reflecting layer 19 and theanode 12, after the reflecting layer 19 is formed, although any times ofetching processes are performed to form the anode 12, the etching cannotcause deterioration of the reflecting layer 19, so that the same effectas that of the first embodiment can be obtained.

In addition, in the embodiment, in an upper-layer side of the cathode16, a transparent substrate 20 is attached at positions corresponding tothe pixels 100 (R), (G), and (B) by using an epoxy-based transparentadhesive layer 30. Therefore, according to the embodiment, light havinga high calorimetric purity can emit from the pixels 100 (R), (G), and(B) in comparison to the first embodiment.

Other Embodiments

Although a top emission type apparatus which emits display light to anopposite side of the substrate 11 is exemplified in the aforementionedembodiments, the invention may be applied to a bottom emission typeapparatus which emits the display light to the substrate side. Namely,in the bottom emission type apparatus, although a lower-layer-sidereflecting film having a semi-transparent reflecting property is formedat the lower-layer side of the anode, an insulating protective film isformed between the anode and the lower-layer-side reflecting film havinga semi-transparent reflecting property, so that deterioration of thelower-layer-side reflecting film can be prevented.

In addition, in order to implement different thicknesses of the anode 12for the pixels 100 (R), (G), and (B), when the ITO film is formed,thicknesses of the ITO films in three film-forming processes may bedifferent from each other. Alternatively, as shown in FIG. 3, there maybe employed a construction where a three-layered structure of a firstlyformed ITO film 121, a secondly formed ITO film 122, and a thirdlyformed ITO film 123 is used for the pixel 100 (R), a two-layeredstructure of the secondly formed ITO film 122 and the thirdly formed ITOfilm 123 is used for the pixel 100 (G), and a single-layered structureof the thirdly formed ITO film 123 is used for the pixel 100 (B).

Application to Display Apparatus

The organic EL apparatus 1 employing the invention may used as a passiveor active matrix type display apparatus. The active matrix type displayapparatus among the display apparatuses has an electrical constructionshown in FIG. 4.

FIG. 4 is a block diagram showing the electrical construction of theactive matrix type organic EL apparatus. In FIG. 4, the organic ELapparatus 1 includes a plurality of scan lines 63, a plurality of datalines 64 disposed to extend in a direction intersecting an extendingdirection of the scan lines 63, plurality of common current-feed lines65 parallel to the data lines 64, and pixels 100 (light-emittingregions) corresponding to intersections of the data lines 64 and thescan lines 63, and the pixels 100 are arrayed in matrix on an imagedisplay region. A data line driving circuit 51 including shiftregisters, level shifters, video lines, and analog switches is providedto drive the data lines 64. A scan line driving circuit 54 includingshift registers and level shifters is provided to drive the scan lines63. In addition, each of the pixels 100 includes a pixel-switching thinfilm transistor 6 having a gate electrode to which a scan signal isapplied through the scan line 63, a storage capacitor 33 which stores animage signal supplied from the data line 64 through the thin filmtransistor 6, a current-controlling thin film transistor 7 having a gateelectrode to which the image signal stored in the storage capacitor 33is applied, and an organic EL device 10 to which a driving current issupplied from the common current-feed line when the organic EL device iselectrically connected to the common current-feed line 65 through thethin film transistor 7. In addition, in organic EL apparatus 1, each ofthe pixels 100 corresponds to one of red (R), green (G), and blue (B).

Other Embodiments

Although the aforementioned embodiments employs the organic EL device asa light emitting device, the invention may be applied to a lightemitting apparatus employing other light emitting devices. In any cases,the technical scope of the invention is not limited to the embodiments,but various modifications may be mad without departing from the scope ofthe invention.

Application to Electronic Apparatus

A light emitting apparatus to which the invention is applied may be usedas a display apparatus for various electronic apparatus such as a mobilephone, a personal computer, and PDA. In addition, the light emittingapparatus to which the invention is applied may used as an exposing headfor an image forming apparatus such as a digital copier and a printer.

1. A light emitting apparatus having light emitting devices having astack of a light-transmitting anode, a functional layer including atleast a light emitting layer, and a cathode for a plurality of pixelscorresponding to red, green, and blue colors on a substrate, wherein anoptical resonator having a lower-layer-side reflecting layer at alower-layer side of the anode is formed in the light emitting device,wherein a plurality of the pixels include pixels which correspond todifferent thicknesses of a anode, and wherein a light-transmittinginsulating protective film is formed between the anode and thelower-layer-side reflecting layer to cover the lower-layer-sidereflecting layer.
 2. The light emitting apparatus according to claim 1,wherein the lower-layer-side reflecting layer has a total reflectingproperty, and wherein light generated by the light emitting layer emitsto an opposite side of the substrate as seen from the light emittinglayer.
 3. The light emitting apparatus according to claim 2, wherein thelower-layer-side reflecting layer is made of any one of aluminum, analuminum alloy, silver, and a silver alloy.
 4. The light emittingapparatus according to claim 1, wherein each of the thicknesses of thepositive layer is defined so as to correspond an optical length of theoptical resonator for each pixel to one of red, green, and blue lights,thereby defining a color corresponding to each pixel.
 5. The lightemitting apparatus according to claim 4, wherein a refraction index ofthe insulating protective film is lower than that of the anode.
 6. Thelight emitting apparatus according to claim 4, wherein the insulatingprotective film is constructed with any one of a silicon nitride film, asilicon oxide film, and a resin.
 7. The light emitting apparatusaccording to claim 4, wherein red, green, and blue color filters aredisposed at light-emitting sides of the red, green, and blue pixels,respectively.
 8. The light emitting apparatus according to claim 1,wherein the light emitting device is an electroluminescence device. 9.An electronic apparatus comprising the light emitting apparatusaccording to claim 1.